High-quality surface passivation of low-resistivity p-type C-Si by hydrogenated amorphous silicon nitride deposited by industrial-scale microwave PECVD

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2011, Pages 001421-001423

  Dutta Gupta, Shubham ^a   Hoex, Bram ^a   Lin, Fen ^a   Mueller, Thomas ^a   Aberle, Armin G ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH QUALITY; LABORATORY SYSTEM; MICROWAVE PECVD; NITRIDE FILMS; P-TYPE; SILICON NITRIDE FILM; SILICON SURFACES; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES;

CHEMICAL VAPOR DEPOSITION; PASSIVATION; PHOTOVOLTAIC EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SILICON NITRIDE;

SILICON WAFERS;

EID: 84861034467     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2011.6186223     Document Type: Conference Paper

References (7)

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3. J.D. Moschner et al., "High-quality surface passivation of silicon solar cells in an industrial-type inline plasma silicon nitride deposition system," Progress in Photovoltaics, vol. 12, pp. 21-31, Jan 2004.
4. W. Soppe et al., "Bulk and surface passivation of silicon solar cells accomplished by silicon nitride deposited on industrial scale by microwave PECVD,"Progress in Photovoltaics, vol. 13, pp. 551-569, Nov 2005.
5. A. Cuevas et al., "Passivation of crystalline silicon using silicon nitride", Proc. 3rd World Conference on Photovoltaic Solar Energy Conversion, Osaka, Japan, pp. 913-918, May 2003
6. S. Dutta Gupta et al., "Optimised antireflection coatings using silicon nitride on textured silicon surfaces based on measurements and multi-dimensional modelling," Proc. International Conference on Materials for Advanced Technologies (ICMAT) 2011, Singapore, Jun 2011 (in press).
7. M.J. Kerr and A. Cuevas, "General parameterization of Auger recombination in crystalline silicon," Journal of Applied Physics, vol. 91, pp. 2473-2480, Feb 2002.