InAs nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) employing PS/PMMA diblock copolymer nanopatterning

Nano Letters

Volumn 13, Issue 12, 2013, Pages 5979-5984

  Huang, Yinggang ^a   Kim, Tae Wan ^a   Xiong, Shisheng ^a   Mawst, Luke J ^a   Kuech, Thomas F ^a   Nealey, Paul F ^a   Dai, Yushuai ^b   Wang, Zihao ^b   Guo, Wei ^b   Forbes, David ^b   Hubbard, Seth M ^b   Nesnidal, Michael ^c  

^a University of Wisconsin Madison   (United States)

^b ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

^c Firefly Technologies   (United States)

Author keywords

MOVPE; Nanostructures; nanowires; selective area growth; semiconducting III V materials; solar cells

Indexed keywords

NANOPATTERNING TECHNIQUES; NANOWIRE MATERIALS; NANOWIRE STRUCTURES; POLYSTYRENE-B-POLY(METHYL METHACRYLATE); SELECTIVE AREA GROWTH; SEMI CONDUCTING III-V MATERIALS; THREADING DISLOCATION; ZINCBLENDE CRYSTAL STRUCTURES;

BLOCK COPOLYMERS; EPITAXIAL GROWTH; ESTERS; INDIUM ARSENIDE; NANOSTRUCTURES; NANOWIRES; POLYMETHYL METHACRYLATES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SILICON NITRIDE; SOLAR CELLS; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; ZINC SULFIDE;

METALLORGANIC VAPOR PHASE EPITAXY;

GALLIUM; GALLIUM ARSENIDE; INDIUM; INDIUM ARSENIDE; METHACRYLIC ACID DERIVATIVE; NANOWIRE; ORGANOARSENIC DERIVATIVE; POLYMER; POLYSTYRENE BLOCK POLY(METHYL METHACRYLATE); POLYSTYRENE DERIVATIVE; POLYSTYRENE-BLOCK-POLY(METHYL METHACRYLATE);

ARTICLE; CHEMISTRY; CRYSTALLIZATION; TRANSMISSION ELECTRON MICROSCOPY;

ARSENICALS; CRYSTALLIZATION; GALLIUM; INDIUM; METHACRYLATES; MICROSCOPY, ELECTRON, TRANSMISSION; NANOWIRES; POLYMERS; POLYSTYRENES;

EID: 84890383265     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl403163x     Document Type: Article

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