Selective MOCVD growth of InGaAs/GaAs and InGaAs/InP quantum dots employing diblock copolymer nanopatterning

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7224, Issue , 2009, Pages

  Mawst, Luke J ^a   Park, Joo Hyung ^a   Rathi, Manish K ^a   Kuech, Thomas F ^a   Verma, Varun B ^b   Coleman, James J ^b  

^a University of Wisconsin Madison   (United States)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

Diblock copolymer nanopatterning; MOCVD; QD; selective growth

Indexed keywords

CARRIER CONFINEMENTS; CARRIER LEAKAGE; CONVENTIONAL APPROACH; CYLINDRICAL DOMAIN; DEVICE APPLICATION; DIBLOCK COPOLYMER; DIBLOCK COPOLYMER NANOPATTERNING; DIODE LASERS; GAAS; GROWTH MODES; HIGH TEMPERATURE SENSITIVITY; HIGHER-DEGREE; INGAAS/GAAS; INGAAS/INP; INP; MATRIX; MOCVD; MOCVD GROWTH; NANO SCALE; NANOPATTERNING; QD; QUANTUM DOT; S-K GROWTH MODE; SELECTIVE GROWTH; UNDERLYING CAUSE; VARIABLE TEMPERATURE; WETTING LAYER; WETTING LAYER STATE;

BLOCK COPOLYMERS; CHEMICAL VAPOR DEPOSITION; COPOLYMERIZATION; GALLIUM ALLOYS; NANOCLUSTERS; OPTICAL GAIN; POLYSTYRENES; SEMICONDUCTOR GROWTH; SIZE DISTRIBUTION; WETTING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 65649110150     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.810882     Document Type: Conference Paper

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