Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates

Nanotechnology

Volumn 23, Issue 41, 2012, Pages

  Kang, J H ^a   Gao, Q ^a   Parkinson, P ^a   Joyce, H J ^b   Tan, H H ^a   Kim, Y ^c   Guo, Y ^d   Xu, H ^d   Zou, J ^d   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF OXFORD   (United Kingdom)

^c Dong A University   (South Korea)

^d UNIVERSITY OF QUEENSLAND   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; CRYSTAL STRUCTURE; FLOW RATE; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOWIRES; ORGANIC CHEMICALS; ORGANOMETALLICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR ALLOYS; SILICON; SILICON COMPOUNDS; STACKING FAULTS;

EXCITON LIFETIME; HIGH GROWTH RATE; NANOWIRE DEVICES; OPTICAL PERFORMANCE; PRECURSOR FLOW RATES; SI(111) SUBSTRATE; SILICON SUBSTRATES; STRUCTURAL DEFECT;

SUBSTRATES;

EID: 84867003414     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/41/415702     Document Type: Article

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