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Journal of Crystal Growth

Volumn 274, Issue 3-4, 2005, Pages 372-378

In situ etching of InGaAsP/InP by using HCl in an MOVPE reactor

(4) Kitatani, T a Tsuchiya, T a Shinoda, K a Aoki, M a

a HITACHI LTD (Japan)

Author keywords

A1. Etching; A1. Low pressure metalorganic vapor phase epitaxy; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL LATTICES; ETCHING; FABRICATION; HYDROCHLORIC ACID; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; PRESSURE EFFECTS; SCANNING ELECTRON MICROSCOPY;

ETCHING TEMPERATURE; SITU ETCHING; TRIETHYLEGALLIUM (TEG); TRIMETHYLEINDIUM (TMI);

INDIUM COMPOUNDS;

EID: 12244309534 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.10.163 Document Type: Article

Times cited : (10)

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