Nanostructured anodic-alumina-based dielectrics for high-frequency integral capacitors

Thin Solid Films

Volumn 550, Issue , 2014, Pages 486-494

  Mozalev, Alexander ^a   Sakairi, Masatoshi ^b   Takahashi, Hideaki ^b,c   Habazaki, Hiroki ^b   Hubálek, Jaromír ^a  

^a BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

^b HOKKAIDO UNIVERSITY   (Japan)

^c ASAHIKAWA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

Anodizing; Dielectric properties; Electric polarization; High frequency performance; Integral capacitors; Nanostructure; Porous alumina; Tantalum oxide

Indexed keywords

ALUMINA BARRIER LAYERS; ELECTRIC POLARIZATION; FREQUENCY DEPENDENCIES; HIGH FREQUENCY PERFORMANCE; INTEGRAL CAPACITORS; LOW-LEAKAGE CURRENT; POROUS ALUMINA; SCANNING AND TRANSMISSION ELECTRON MICROSCOPY;

ALUMINA; ALUMINUM; ANODIC OXIDATION; DIELECTRIC PROPERTIES; ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY; ELECTROLYTIC CAPACITORS; METALLIC FILMS; NANOSTRUCTURES; POLARIZATION; SILICON; SILICON ALLOYS; SILICON WAFERS; TANTALUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY;

DIELECTRIC MATERIALS;

EID: 84890315741     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.02.077     Document Type: Article

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