Temperature stability of thin anodic oxide films in metal/insulator/metal structures: A comparison between tantalum and aluminium oxide

Thin Solid Films

Volumn 500, Issue 1-2, 2006, Pages 330-335

  Jeliazova, Yanka ^a   Kayser, Michael ^a   Mildner, Beate ^a   Hassel, Achim Walter ^b   Diesing, Detlef ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b MAX PLANCK INSTITUT FÜR EISENFORSCHUNG GMBH   (Germany)

Author keywords

Aluminum oxide; Dielectric properties; Tantalum oxide; Tunnelling

Indexed keywords

ALUMINA; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; MIM DEVICES; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY;

ROOM TEMPERATURE; TANTALUM OXIDE;

THIN FILMS;

EID: 31644449221     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.10.088     Document Type: Article

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