Reduction of microwave dielectric losses in KTa1 - xNbxO3 thin films by MgO-doping

Thin Solid Films

Volumn 517, Issue 20, 2009, Pages 5940-5942

  Simon, Q ^a   Bouquet, V ^a   Peng, W ^a   Le Floch, J M ^b,d   Houdonougbo, F ^b   Deputier S ^a   Weber, S ^c   Dauscher, A ^c   Madrangeas, V ^b   Cros, D ^b   Guilloux Viry, M ^a  

^a INSTITUT DES SCIENCES CHIMIQUES DE RENNES   (France)

^b Centre National de la Recherche Scientifique   (France)

^c INSTITUT JEAN LAMOUR   (France)

^d UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

KTN; MgO doping; Microwave devices; Pulsed laser deposition; Scanning electron microscopy; Secondary neutral mass spectroscopy; Thin films; X ray diffraction

Indexed keywords

DIELECTRIC MEASUREMENTS; HIGH-FREQUENCY DIELECTRICS; INTER-DIFFUSION; KTN; LOSS TANGENT; MGO SUBSTRATE; MGO-DOPING; MICROWAVE DIELECTRICS; RESONANT CAVITY; SECONDARY NEUTRAL MASS SPECTROSCOPY; UNDOPED FILMS;

CERAMIC CAPACITORS; CORUNDUM; DIELECTRIC DEVICES; DIELECTRIC LOSSES; DIFFRACTION; DOPING (ADDITIVES); LASERS; MASS SPECTROMETERS; MASS SPECTROMETRY; MICROWAVE DEVICES; MICROWAVES; NIOBIUM; PERTURBATION TECHNIQUES; PULSED LASER DEPOSITION; SAPPHIRE; SCANNING; SCANNING ELECTRON MICROSCOPY; THIN FILMS; X RAY DIFFRACTION;

SUBSTRATES;

EID: 66949181083     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.04.022     Document Type: Article

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