Growth of multioxide planar film with the nanoscale inner structure via anodizing Al/Ta layers on Si

Electrochimica Acta

Volumn 54, Issue 3, 2009, Pages 935-945

  Mozalev, A ^a   Smith, A J ^b   Borodin, S ^b   Plihauka, A ^a   Hassel, A W ^b   Sakairi, M ^c   Takahashi, H ^c  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

^b MAX PLANCK INSTITUT FÜR EISENFORSCHUNG GMBH   (Germany)

^c HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Anodizing; Ionic transport; Nanostructures; Porous anodic alumina; Tantalum oxide

Indexed keywords

AGGLOMERATION; ALUMINUM; ANODIC OXIDATION; BORIDES; BORON; BORON COMPOUNDS; ELECTROLYTES; FILM GROWTH; GROWTH (MATERIALS); IONIC CONDUCTION; MANGANESE COMPOUNDS; NANOSTRUCTURES; POPULATION STATISTICS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; TANTALUM; TANTALUM COMPOUNDS; TRANSITION METALS;

ALUMINA FILMS; ALUMINA PORES; ANODIZING; AVERAGE VALUES; BI LAYERS; DIBORIDE; INNER STRUCTURES; IONIC TRANSPORT; IONIC TRANSPORT PROCESSES; NANO COLUMNS; NANOSCALE; ORDERED NANOPOROUS; ORGANIZED GROWTHS; OXALIC ACID ELECTROLYTES; OXIDATION STATES; OXIDE NANOSTRUCTURES; OXIDIZED BORONS; PLANAR FILMS; POPULATION DENSITIES; POROUS ANODIC ALUMINA; POTENTIODYNAMIC; REANODIZING; SIMULTANEOUS GROWTHS; TANTALUM OXIDE; TANTALUM OXIDES; TRANSPORT NUMBERS;

ALUMINA;

EID: 57149102074     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2008.08.030     Document Type: Article

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