Physically-based RF model for metal-oxide-metal capacitors

Electronics Letters

Volumn 36, Issue 5, 2000, Pages 425-427

  Geng, Chunqi ^a   Chew, Kok Wai ^b   Yeo, Kiat Seng ^a   Do, Manh Anh ^a   Ma, Jianguo ^a   Chua, Chee Tee ^b   Shao, Kai ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK TOPOLOGY; INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTOR DEVICE MODELS;

METAL OXIDE METAL (MOM) CAPACITORS;

CAPACITORS;

EID: 0033882762     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000393     Document Type: Article

References (6)

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2. BURGHAARTZ, J.N., SOYUER, M., JENKINS, K.A., KIES, M., DOLAN, M., STEIN, K.J., MALINOWSKI, J., and HARANE, D.L.: 'Integrated RF components in a SiGe bipolar technology', IEEE J. Solid-State Circuits, 1997, 32, (9), pp. 1440-1445
3. SAMAVATI, H., HAJIMIRI, A., SHAHANI, A.R., NASSERBAKHT, G.N., and LEE, T.H.: 'Fractal capacitors', IEEE J. Solid-State Circuits, 1998, 33, (12), pp. 2035-2041
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