High-Quality Interface in Al2O3/GaN/GaN/AlGaN/GaN MIS Structures with in Situ Pre-Gate Plasma Nitridation

IEEE Electron Device Letters

Volumn 34, Issue 12, 2013, Pages 1497-1499

  Yang, Shu ^a   Tang, Zhikai ^a   Wong, King Yuen ^b   Lin, Yu Syuan ^b   Liu, Cheng ^a   Lu, Yunyou ^a   Huang, Sen ^a   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

gate stack; hysteresis; III nitride; MIS HEMTs

Indexed keywords

ALUMINA; ALUMINUM NITRIDE; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; GALLIUM NITRIDE; HYSTERESIS; III-V SEMICONDUCTORS; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; MIS DEVICES; NITRIDES; WIDE BAND GAP SEMICONDUCTORS;

ELECTRICAL CHARACTERISTIC; GATE STACKS; GATE-LEAKAGE CURRENT; HIGH-QUALITY INTERFACE; III-NITRIDE; METAL INSULATOR SEMICONDUCTOR HIGH ELECTRON MOBILITY TRANSISTORS (MISHEMT); PLASMA NITRIDATION; TREATMENT TECHNOLOGIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84889658918     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2286090     Document Type: Article

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