Effect of oxidant source on threshold voltage shift of AlGaN/GaN MIS-HEMTs using ALD-Al2O3 gate insulator films

2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012

Volumn , Issue , 2012, Pages

  Ozaki, Shiro ^a   Ohki, Toshihiro ^a   Kanamura, Masahito ^a   Imada, Tadahiro ^a   Nakamura, Norikazu ^a   Okamoto, Naoya ^a   Miyajima, Toyoo ^a   Kikkawa, Toshihide ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Al2O3; ALD; GaN HEMT; MIS HEMT; Oxidant source; Threshold voltage shift

Indexed keywords

ALD; GAN HEMTS; MIS-HEMT; OXIDANT SOURCES; THRESHOLD VOLTAGE SHIFTS;

ALUMINUM; ATOMIC LAYER DEPOSITION; GALLIUM NITRIDE; MIS DEVICES; OXIDANTS; PLASMAS; RAPID THERMAL ANNEALING; SEMICONDUCTOR DEVICE MANUFACTURE; THRESHOLD VOLTAGE; VAPORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84887360997     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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