Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Lagger, Peter ^a   Ostermaier, Clemens ^a   Pobegen, Gregor ^b   Pogany, Dionyz ^c  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b Kompetenzzentrum Automobil und Industrie Elektronik Gmbh   (Austria)

^c VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN MIS-HEMTS; BIAS TEMPERATURE INSTABILITY; DISTRIBUTION OF TIME CONSTANTS; GATE-BIAS STRESS; INSULATED GATE; PHYSICAL MECHANISM; PHYSICAL MODEL; THRESHOLD-VOLTAGE INSTABILITIES;

CMOS INTEGRATED CIRCUITS; ELECTRON DEVICES; INTEGRATED CIRCUITS; MODELS;

GALLIUM NITRIDE;

EID: 84876118965     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6479033     Document Type: Conference Paper

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