Stochastic simulation of forming, SET and RESET process for transition metal oxide-based resistive switching memory

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2012, Pages 312-315

  Huang, Peng ^a   Gao, Bin ^a   Chen, Bing ^a   Zhang, Feifei ^a   Liu, Lifeng ^a   Du, Gang ^a   Kang, Jinfeng ^a   Liu, Xiaoyan ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Conductive filaments' geometry; Oxygen vacancies' distribution; Resistive switching; Stochastic simulation

Indexed keywords

ELECTRIC FIELDS; SEMICONDUCTOR DEVICES; SOLVENTS; STOCHASTIC MODELS; STOCHASTIC SYSTEMS; TRANSITION METAL OXIDES; TRANSITION METALS;

CONDUCTIVE FILAMENTS; ELECTRICAL CHARACTERISTIC; EXTERNAL ELECTRIC FIELD; INTERSTITIAL OXYGEN IONS; RESISTIVE SWITCHING DEVICES; RESISTIVE SWITCHING MEMORY; SIMULATION METHODOLOGY; STOCHASTIC SIMULATIONS;

OXYGEN VACANCIES;

EID: 85088043866     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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