SCOPUS 정보 검색 플랫폼

Volumn 517, Issue 23, 2009, Pages 6392-6395

Correlation of structural and optoelectronic properties of thin film silicon prepared at the transition from microcrystalline to amorphous growth

(4) Reynolds, Steve a Carius, Reinhard b Finger, Friedhelm b Smirnov, Vladimir b

a UNIVERSITY OF DUNDEE (United Kingdom)

b FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

Amorphous silicon; Microcrystalline silicon; Raman scattering; Solar cells

Indexed keywords

AMORPHOUS GROWTH; CRYSTALLINITIES; OPTOELECTRONIC PROPERTIES; PHOTOVOLTAIC PROPERTY; SELECTION RULES; SOLAR CELL EFFICIENCIES; THIN FILM SILICON; TIME OF FLIGHT MEASUREMENTS;

AMORPHOUS FILMS; CELL MEMBRANES; ELECTRON MOBILITY; FILM GROWTH; MICROCRYSTALLINE SILICON; PHOTOVOLTAIC CELLS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SCATTERING; SEMICONDUCTING SILICON COMPOUNDS; SOLAR CELLS; SOLAR POWER GENERATION;

AMORPHOUS SILICON;

EID: 68449096378 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2009.02.107 Document Type: Article

Times cited : (14)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.