Impurity diffusion effect on P/I interface properties of P-I-N junction microcrystalline silicon solar cells

Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

Volumn B, Issue , 2003, Pages 1831-1834

  Matsui, Takuya ^a   Fujibayashi, Takashi ^a   Nasuno, Yoshiyuki ^a   Fukuhori, Hitoshi ^b   Kanemitsu, Yoshihiko ^b   Kondo, Michio ^a   Matsuda, Akihisa ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON SPIN RESONANCE (ESR); MICROCRYSTALLINE SILICON; NON-RADIATIVE RECOMBINATION; SOLAR CELL PERFORMANCE;

CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; DIFFUSION; ELECTRIC CHARGE; ELECTRIC POTENTIAL; INTERFACES (MATERIALS); SEMICONDUCTOR JUNCTIONS;

SILICON SOLAR CELLS;

EID: 6344229909     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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