Improvement in stabilized efficiency of a-Si:H solar cells through optimized p/i-interface layers

Solar Energy Materials and Solar Cells

Volumn 41-42, Issue , 1996, Pages 475-483

  Rech, B ^a   Beneking, C ^a   Wagner, H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; DEGRADATION; DESIGN; EFFICIENCY; ELECTRIC FIELDS; LIGHT; OPTIMIZATION; STABILITY; SURFACE PROPERTIES;

CELL DESIGN; FILL FACTOR; LIGHT SOAKING; LIGHT STABILITY; OPEN CIRCUIT VOLTAGE; STACKED CELLS;

SOLAR CELLS;

EID: 0030172240     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0927-0248(95)00127-1     Document Type: Article

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7. C. Beneking, B. Rech, T. Eickhoff, Y.G. Michael, N. Schultz and H. Wagner, in: Proc. 12th EC Photovoltaic Science and Engineering Conf., Amsterdam, 1994, p. 683.