H2-dilution vs. buffer layers for increased Voc

Materials Research Society Symposium - Proceedings

Volumn 420, Issue , 1996, Pages 51-56

  Platz, R ^a   Fischer, D ^a   Hof, C ^a   Dubail, S ^a   Meier, J ^a   Kroll, U ^a   Shah, A ^a  

^a UNIVERSITY OF NEUCHÂTEL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; BAND STRUCTURE; BORON; DEGRADATION; DEPOSITION; DOPING (ADDITIVES); HYDROGEN; HYDROGENATION; LIGHT ABSORPTION; SEMICONDUCTOR GROWTH; SOLAR CELLS; STABILITY;

BUFFER LAYERS; HYDROGEN DILUTION; MICROMORPH TANDEM CELL; OPEN CIRCUIT VOLTAGE;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0030414457     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-420-51     Document Type: Conference Paper

References (11)