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Volumn 468, Issue 1-2, 2004, Pages 222-225

Reduction of the boron cross-contamination for plasma deposition of p-i-n devices in a single-chamber large area radio-frequency reactor

(8) Ballutaud, J a Bucher, C b Hollenstein, Ch a Howling, A A a Kroll, U a Benagli, S a Shah, A b Buechel, A c

a EPFL (Switzerland)

b Institut de Microtechnique (Switzerland)

c Unaxis Displays (Liechtenstein)

Author keywords

Amorphous silicon; Boron contamination; Plasma processing and deposition; Solar cells

Indexed keywords

AMMONIA; AMORPHOUS SILICON; BORON; CHEMICAL REACTORS; CONTAMINATION; INTERFACES (MATERIALS); PHOTOVOLTAIC CELLS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REDUCTION; SEMICONDUCTOR DEVICES; SOLAR CELLS;

BORON CONTAMINATION; PLASMA PROCESSING AND DEPOSITION;

THIN FILMS;

EID: 4644238088 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2004.05.034 Document Type: Article

Times cited : (20)

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