Single-chamber processes for a-Si:H solar cell deposition

Solar Energy Materials and Solar Cells

Volumn 98, Issue , 2012, Pages 146-153

  Merdzhanova, T ^a   Woerdenweber, J ^a   Zimmermann, T ^a   Zastrow, U ^a   Flikweert, A J ^a   Stiebig, H ^b   Beyer, W ^a,b   Gordijn, A ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b Malibu GmbH and Co KG   (Germany)

Author keywords

a Si:H; Boron; Cross contamination; Single chamber process

Indexed keywords

A-SI:H; BORON CONCENTRATIONS; BORON-DOPED; CELL DEPOSITION; CROSS CONTAMINATION; DEPOSITION CHAMBERS; DEVICE CONFIGURATIONS; DEVICE EFFICIENCY; EX SITU; INTRINSIC LAYER; MULTI-CHAMBER SYSTEMS; P-DOPED LAYERS; P-LAYER; PLASMA TREATMENT; PROCESS STEPS; REACTOR GEOMETRIES; SHORT WAVELENGTHS; SHOWERHEAD ELECTRODE; SINGLE-CHAMBER PROCESS; SOLAR CELL EFFICIENCIES; STABLE EFFICIENCIES; TREATMENT METHODS; TREATMENT TIME;

BORON; CARBON DIOXIDE; CHEMICAL VAPOR DEPOSITION; CONTAMINATION; DEPOSITION; EFFICIENCY; PHOSPHORUS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON;

PLASMA DEPOSITION;

EID: 84855297751     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.10.022     Document Type: Article

References (17)

1. R. Platz, D. Fischer, S. Dubail, and A. Shah a-Si:H/μc-Si:H stacked cell from VHF-deposition in a single chamber reactor with 9% stabilized efficiency Solar Energy Materials and Solar Cells 46 1997 157 172 (Pubitemid 127389287)
2. J. Bauer, H. Calwer, P. Markstorfer, P. Milla, F.W. Schulze, and K.-D. Ufert Manufacturing of large area single junction a-Si:H solar modules with 10.7% efficiency Journal of Non-Crystalline Solids 164166 1993 685 688
3. M. Kubon, N. Schultz, M. Kohler, C. Beneking, H. Wagner, Modification of TCOp interface in a-Si:H solar cells by intermediate layers and plasma treatments, in: Proceedings of the 12th European Photovoltaic Solar Energy Conference, Amsterdam, 1994, pp. 12681270.
4. T. Repmann, W. Appenzeller, B. Sehrbrock, H. Stiebig, B. Rech, Advanced PECVD process for thin-film silicon solar cells on glass, in: Proceedings of the 19th European Photovoltaic Solar Energy Conference, Paris, France, 2004, pp. 13341339.
5. U. Kroll, C. Bucher, S. Benagli, I. Schoenbaechler, J. Meier, A. Shah, J. Ballutaud, A. Howling, Ch. Hollenstein, A. Buechel, and M. Poppeller High-efficiency pin a-Si:H solar cells with low boron cross-contamination prepared in a large-area single-chamber PECVD reactor Thin Solid Films 451452 2004 525 530
6. J. Ballutaud, C. Bucher, Ch. Hollenstein, A.A. Howling, U. Kroll, S. Benagli, A. Shah, and A. Buechel Reduction of the boron cross-contamination for plasma deposition of pin devices in a single-chamber large area radio-frequency reactor Thin Solid Films 468 2004 222 225
7. J. Ballutaud, A.A. Howling, L. Sansonnes, Ch. Hollenstein, U. Kroll, I. Schoenbaecher, C. Bucher, M. Poppeller, J. Weichart, A. Buelech, F. Jomard, Plasma deposition of pin devices using a single PECVD chamber: study of the boron concentration, in: Proceedings of the 29th EPS Conference on Plasma Physics and Controlled Fusion, Montreux, Switzerland, vol. 26B, 2002, p. 2.029.
8. Y.S. Tsuo, Y. Xu, R.S. Crandall, H.S. Ullal, and K. Emery Hydrogen-plasma reactive flushing for a-Si:H pin solar cell fabrication Materials Research Society Symposium Proceedings 149 1989 471 476
9. J. Woerdenweber, T. Merdzhanova, A.J. Flikweert, T. Zimmermann, U. Zastrow, L. Niessen, W. Reetz, H. Stiebig, W. Beyer, A. Gordijn, Single-chamber process for deposition of thin-film silicon solar cells without plasma treatment, in: Proceedings of the 25th European Photovoltaic Solar Energy Conference and 5th World Conference on Photovoltaic Energy Conversion, Valencia, Spain 2010, pp. 29782982.
10. 2) VHF-GD reactor Materials Research Society Symposium Proceedings 557 1999 121 126
11. 6 by combining spectroscopic ellipsometry and Kelvin probe measurements Journal of Applied Physics 66 1989 3286 3292
12. B. Rech, C. Beneking, and H. Wagner Improvement in stabilized efficiency of a-Si:H solar cells through optimized p/i-interface layers Solar Energy Materials and Solar Cells 41 1996 475 483 (Pubitemid 126357094)
13. J. Xi, D. Shugar, H. Volltrauer, Large area module performance and identification and control of pi interface correlated device degradation and further improvements in stabilized efficiencies of single-junction a-Si solar cells, in: Proceedings of the First World Conference and Exhibition on Photovoltaic Solar Energy Conversion, 1994, pp. 401404.
14. H. Sakai, T. Yoshida, S. Fujikake, T. Hama, and Y. Ichikawa Journal of Applied Physics 67 7 1990 3494 3499
15. T. Yoshida, S. Fujikake, H. Shimabukuro, Y. Ichikawa, H. Sakai, Open-circuit voltage of pin a-Si based solar cells, in: Proceedings of the 20th IEEE PVSC, 1998 pp. 335339.
16. R.R. Arya, A. Catalano, and R.S. Oswald Amorphous silicon pin solar cells with graded interface Applied Physics Letters 49 1986 1089 1091
17. C. Beneking, B. Rech, S. Wieder, O. Kluth, H. Wagner, W. Frammelsberger, R. Geyer, P. Lechner, H. Ruèbel, and H. Schade Recent developments of silicon thin film solar cells on glass substrates Thin Solid Films 351 1999 241 246 (Pubitemid 32213765)