Effect of crucible coating on the grain control of multi-crystalline silicon crystal growth

Journal of Crystal Growth

Volumn 363, Issue , 2013, Pages 242-246

  Tsai, H W ^a   Yang, M ^b   Chuck, C ^b   Lan, C W ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b Sino American Silicon Productions Inc   (Taiwan)

Author keywords

A1. Nucleation; A1. Substrates; A2. Bridgman technique; B2. Semiconducting silicon

Indexed keywords

COATINGS; COOLING; CRYSTAL GROWTH; CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; GRAIN BOUNDARIES; NUCLEATION; SEMICONDUCTING SILICON; SILICON; SOLIDIFICATION;

BRIDGMAN TECHNIQUES; FIRING CONDITIONS; GRAIN ORIENTATION; HIGH COOLING RATES; INDUSTRIAL PRODUCTION; MULTI-CRYSTALLINE SILICON; ORIENTATION DISTRIBUTIONS; PREFERRED GROWTH;

GRAIN GROWTH;

EID: 84888346543     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.10.052     Document Type: Article

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