Grain growth behaviors of polycrystalline silicon during melt growth processes

Journal of Crystal Growth

Volumn 266, Issue 4, 2004, Pages 441-448

  Fujiwara, Kozo ^a   Obinata, Yoshikazu ^a   Ujihara, Toru ^a   Usami, Noritaka ^a   Sazaki, Gen ^a   Nakajima, Kazuo ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Facet interface; A1. In situ observation; A1. Undercooling; A3. Grain growth; B1. Polycrystalline silicon

Indexed keywords

COOLING; CRYSTAL GROWTH FROM MELT; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); GRAIN BOUNDARIES; GRAIN GROWTH; INCLUSIONS; INTERFACES (MATERIALS); INTERFACIAL ENERGY; MORPHOLOGY; REACTION KINETICS;

FACET INTERFACES; GRAIN ORIENTATION; IN SITU OBSERVATIONS; UNDERCOOLING;

POLYSILICON;

EID: 2442423181     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.03.008     Document Type: Article

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