An enhanced cooling design in directional solidification for high quality multi-crystalline solar silicon

Journal of Crystal Growth

Volumn 340, Issue 1, 2012, Pages 202-208

  Li, T F ^a   Huang, H C ^a   Tsai, H W ^a   Lan, A ^b   Chuck, C ^b   Lan, C W ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b Sino American Silicon Productions Inc   (Taiwan)

Author keywords

A1. Directional solidification; A3. Grain growth; B2. Silicon

Indexed keywords

COMMERCIAL FURNACE; COOLING CONDITIONS; ENHANCED COOLING; ENHANCED HEAT TRANSFER; GRAIN ORIENTATION; GRAIN SIZE; HIGH QUALITY; MULTI-CRYSTALLINE SILICON; TWIN BOUNDARIES;

COOLING; CRYSTALLINE MATERIALS; DEFECT DENSITY; DESIGN; SOLIDIFICATION;

GRAIN GROWTH;

EID: 84855910291     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.12.045     Document Type: Article

References (13)

1. D. Sarti, and R. Einhaus Silicon feedstock for the multi-crystalline photovoltaic industry Solar Energy Materials and Solar Cells 72 2002 27 40 (Pubitemid 34181840)
2. K. Yang, G.H. Schwuttke, and T.F. Ciszek Structure and electrical characterization of crystallographic defects in silicon ribbons Journal of Crystal Growth 50 1980 301 310
3. A.L. Endrös Mono- and tri-crystalline Si for PV production Solar Energy Materials and Solar Cells 72 2002 109 124
4. J. Chen, T. Sekiguchi, R. Xie, P. Ahmet, T. Chikyo, D. Yang, S. Ito, and F. Yin Electron-beam-induced current study on small-angle grain boundaries in multicrystalline silicon Scripta Materialia 52 2005 1211 1215 (Pubitemid 40467148)
5. J. Chen, D. Yang, Z. Xi, and T. Sekiguchi Recombination activity of Σ3 boundaries in boron-doped mulicrystalline silicon: Influence of iron contamination Journal of Applied Physics 97 2005 033701
6. K. Fujiwara, K. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa, S. Mizoguchi, and K. Nakajima In situ observations of crystal growth behavior of silicon melt Journal of Crystal Growth 243 2002 275 282 (Pubitemid 34805978)
7. K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki, and K. Nakajima In-situ observations of melt growth behavior of polycrystalline silicon Journal of Crystal Growth 262 2004 124 129
8. K. Fujiwara, W. Pan, K. Sawada, M. Tokairin, N. Usami, Y. Nose, A. Nomura, T. Shishido, and K. Nakajima Directional growth method to obtain high quality polycrystalline silicon from its melt Journal of Crystal Growth 292 2006 282 285 (Pubitemid 44036912)
9. T.Y. Wang, S.L. Hsu, C.C. Fei, K.M. Yei, W.C. Hsu, and C.W. Lan Grain control using spot cooling in multi-crystalline silicon crystal growth Journal of Crystal Growth 311 2009 263 267
10. K.M. Yeh, C.K. Hseih, W.C. Hsu, and C.W. Lan High-quality multi-crystalline silicon growth for solar cells by grain-controlled directional solidification Progress in Photovoltaics: Research and Applications 18 2010 265 271
11. T.F. Li, K.M. Yeh, W.C. Hsu, and C.W. Lan High-quality multi-crystalline silicon (mc-Si) grown by directional solidification using notched crucibles Journal of Crystal Growth 318 2011 219 223
12. K. Nakajima, K. Kutsukake, K. Fujiwara, K. Morishita, and S. Ono Arrangement of dendrite crystals grown along the bottom of Si ingots using the dendritic casting method by controlling thermal conductivity under crucibles Journal of Crystal Growth 319 2011 13 18
13. K. Fujiwara, H. Fukuda, N. Usami, K. Nakajima, and S. Uda Growth mechanism of the Si 〈1 1 0〉 faceted dendrite Physical Review B 81 2010 224106