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Volumn 312, Issue 8, 2010, Pages 1297-1300
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The effect of substrate material on nucleation behavior of molten silicon for photovoltaics
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Author keywords
A1. Interfaces; A1. Nucleation; B2. Semiconducting silicon; B3. Solar cells
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Indexed keywords
A1. INTERFACES;
B2. SEMICONDUCTING SILICON;
B3.SOLAR CELL;
COATING MATERIAL;
COATING THICKNESS;
CRYSTAL GROWTH PROCESS;
CRYSTALLINE SILICONS;
DRIVING FORCES;
MELTING TEMPERATURES;
MOLTEN SILICON;
NUCLEATION BEHAVIOR;
PHOTOVOLTAIC APPLICATIONS;
PHOTOVOLTAICS;
PHYSICAL CONTACTS;
SAMPLE DEFORMATION;
SUBSTRATE MATERIAL;
THERMAL OXIDES;
COATINGS;
DIFFERENTIAL SCANNING CALORIMETRY;
GRAIN BOUNDARIES;
MOLTEN MATERIALS;
NUCLEATION;
PHOTOVOLTAIC EFFECTS;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR GROWTH;
SILICON NITRIDE;
SOLAR CELLS;
SUBSTRATES;
THICKNESS MEASUREMENT;
UNDERCOOLING;
SEMICONDUCTING SILICON;
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EID: 77949578631
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2009.12.010 Document Type: Article |
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Times cited : (16)
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References (10)
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