SiC and Si3N4 inclusions in multicrystalline silicon ingots

Materials Science in Semiconductor Processing

Volumn 7, Issue 1-2, 2004, Pages 39-43

  Soiland A K ^a   Ovrelid E J ^b   Engh, T A ^a   Lohne, O ^a   Tuset, J K ^a   Gjerstad, O ^c  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b SINTEF   (Norway)

^c ScanWafer ASA   (Norway)

Author keywords

Inclusions; Multicrystalline Si; Si3N4; SiC

Indexed keywords

CRYSTALLINE MATERIALS; DISSOLUTION; FILTRATION; HAFNIUM COMPOUNDS; INCLUSIONS; INGOTS; NUCLEATION; PARTICLE SIZE ANALYSIS; SILICON NITRIDE;

MULTICRYSTALLINE SI; SI3N4; SIC; WAFER TECHNOLOGY;

SILICON CARBIDE;

EID: 3242881732     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.05.001     Document Type: Article

References (13)

1. Newman R.C., Smith R.S. J Phys Chem Solids. 30:1969;1493.
2. Bean A.R., Newman R.C. J Phys Chem Solids. 32:1971;1211.
3. Sun Q., Yao K.H., Lagowski J., Gatos H.C. J Appl Phys. 67(9):1990;4313-4319.
4. Shimura F., Baiardo J.P., Fraundorf P. Appl Phys Lett. 46(10):1985;941-943.
5. Hari Rao C.V., Bates H.E., Ravi K.V. J Appl Phys. 47(6):1976;2614.
6. Schmid F., Khattak C.P., Digges T.G., Kaufmann L. J Electrochem Soc. 126:1979;935.
7. Carlberg T. J Electrochem Soc: Solid-State Science and Technology. 130(1):1983;168-171.
8. Jennings H.M. J Mater Sci. 18:1983;951-967.
9. Chase Jr. MW, Davis CA, Downey Jr. JR, Frurip DJ, McDonald RA, Syverud AN. JANAF Thermochemical Tables, 3rd ed. 1985;14(1):634.
10. Iguchi Y, Narushima T, First International Conference on Processing Materials for Properties, Ed. by Henein H and Oki T, The Minerals, Metals and Materials Society 1993; p. 437-440.
11. Yatsurugi Y., Akiyama N., Endo Y. J Electrochem Soc. 120(7):1973;975.
12. Kaiser W., Thurmond C.D. J Appl Phys. 30(3):1959;427-431.
13. Mukerji J., Biswas S.K. J Am Ceramic Soc. 64(9):1981;549-552.