-
1
-
-
77950339947
-
Relationship between dislocation density and nucleation of multicrystalline silicon
-
G. Stokkan Relationship between dislocation density and nucleation of multicrystalline silicon Acta Materialia 58 9 2010 3223 3229
-
(2010)
Acta Materialia
, vol.58
, Issue.9
, pp. 3223-3229
-
-
Stokkan, G.1
-
2
-
-
33644546392
-
Growth mechanism of twin-related and twin-free facet Si dendrites
-
K. Nagashio, and K. Kuribayashi Growth mechanism of twin-related and twin-free facet Si dendrites Acta Materialia 53 10 2005 3021 3029
-
(2005)
Acta Materialia
, vol.53
, Issue.10
, pp. 3021-3029
-
-
Nagashio, K.1
Kuribayashi, K.2
-
7
-
-
84857790240
-
Carbon reaction with levitated siliconExperimental and thermodynamic approaches
-
M. Beaudhuin, G. Chichignoud, P. Bertho, T. Duffar, M. Lemiti, and K. Zaidat Carbon reaction with levitated siliconExperimental and thermodynamic approaches Materials Chemistry and Physics 133 1 2012 284 288
-
(2012)
Materials Chemistry and Physics
, vol.133
, Issue.1
, pp. 284-288
-
-
Beaudhuin, M.1
Chichignoud, G.2
Bertho, P.3
Duffar, T.4
Lemiti, M.5
Zaidat, K.6
-
8
-
-
9944258597
-
-
J. Chen, T. Sekiguchi, D. Yang, F. Yin, K. Kido, and S. Tsurekawa Electron-beam-induced current study of grain boundaries in multicrystalline silicon 96 10 2004 5490 5495
-
(2004)
Electron-beam-induced Current Study of Grain Boundaries in Multicrystalline Silicon
, vol.96
, Issue.10
, pp. 5490-5495
-
-
Chen, J.1
Sekiguchi, T.2
Yang, D.3
Yin, F.4
Kido, K.5
Tsurekawa, S.6
-
9
-
-
34247641611
-
Formation mechanism of parallel twins related to Si-facetted dendrite growth
-
DOI 10.1016/j.scriptamat.2007.03.052, PII S1359646207002497
-
K. Fujiwara, K. Maeda, N. Usami, G. Sazaki, Y. Nose, and K. Nakajima Formation mechanism of parallel twins related to Si-facetted dendrite growth Scripta Materialia 57 2 2007 81 84 (Pubitemid 46678890)
-
(2007)
Scripta Materialia
, vol.57
, Issue.2
, pp. 81-84
-
-
Fujiwara, K.1
Maeda, K.2
Usami, N.3
Sazaki, G.4
Nose, Y.5
Nakajima, K.6
-
10
-
-
2442423181
-
Grain growth behaviors of polycrystalline silicon during melt growth processes
-
K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki, and K. Nakajima Grain growth behaviors of polycrystalline silicon during melt growth processes Journal of Crystal Growth 266 4 2004 441 448
-
(2004)
Journal of Crystal Growth
, vol.266
, Issue.4
, pp. 441-448
-
-
Fujiwara, K.1
Obinata, Y.2
Ujihara, T.3
Usami, N.4
Sazaki, G.5
Nakajima, K.6
-
11
-
-
33847204589
-
Solidification of highly undercooled Si and SiGe melts
-
C. Panofen, and D. Herlach Solidification of highly undercooled Si and SiGe melts Materials Science and Engineering: A 449451 2007 699 703
-
(2007)
Materials Science and Engineering: A
, vol.449-451
, pp. 699-703
-
-
Panofen, C.1
Herlach, D.2
-
12
-
-
44449090896
-
In-situ observation of Si faceted dendrite growth from low-degree of undercooling melts
-
K. Fujiwara, K. Maeda, N. Usami, G. Sazaki, Y. Nose, A. Nomura, T. Shishido, and K. Nakajima In-situ observation of Si faceted dendrite growth from low-degree of undercooling melts Acta Materialia 56 11 2008 2663 2668
-
(2008)
Acta Materialia
, vol.56
, Issue.11
, pp. 2663-2668
-
-
Fujiwara, K.1
Maeda, K.2
Usami, N.3
Sazaki, G.4
Nose, Y.5
Nomura, A.6
Shishido, T.7
Nakajima, K.8
-
13
-
-
0842344378
-
In-situ observations of melt growth behavior of polycrystalline silicon
-
K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki, and K. Nakajima In-situ observations of melt growth behavior of polycrystalline silicon Journal of Crystal Growth 262 14 2004 124 129
-
(2004)
Journal of Crystal Growth
, vol.262
, Issue.14
, pp. 124-129
-
-
Fujiwara, K.1
Obinata, Y.2
Ujihara, T.3
Usami, N.4
Sazaki, G.5
Nakajima, K.6
-
14
-
-
0036680087
-
In situ observations of crystal growth behavior of silicon melt
-
DOI 10.1016/S0022-0248(02)01521-X, PII S002202480201521X
-
K. Fujiwara, K. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa, S. Mizoguchi, and K. Nakajima In situ observations of crystal growth behavior of silicon melt Journal of Crystal Growth 243 2 2002 275 282 (Pubitemid 34805978)
-
(2002)
Journal of Crystal Growth
, vol.243
, Issue.2
, pp. 275-282
-
-
Fujiwara, K.1
Nakajima, K.2
Ujihara, T.3
Usami, N.4
Sazaki, G.5
Hasegawa, H.6
Mizoguchi, S.7
Nakajima, K.8
-
15
-
-
70449467046
-
Growth behavior of faceted Si crystals at grain boundary formation
-
K. Fujiwara, S. Tsumura, M. Tokairin, K. Kutsukake, N. Usami, S. Uda, and K. Nakajima Growth behavior of faceted Si crystals at grain boundary formation Journal of Crystal Growth 312 1 2009 19 23
-
(2009)
Journal of Crystal Growth
, vol.312
, Issue.1
, pp. 19-23
-
-
Fujiwara, K.1
Tsumura, S.2
Tokairin, M.3
Kutsukake, K.4
Usami, N.5
Uda, S.6
Nakajima, K.7
-
16
-
-
77949876026
-
Silicon purity controlled under electromagnetic levitation (SPYCE): Influences on undercooling
-
M. Beaudhuin, K. Zaidat, T. Duffar, and M. Lemiti Silicon purity controlled under electromagnetic levitation (SPYCE): influences on undercooling Journal of Materials Science 45 2010 2218 2222
-
(2010)
Journal of Materials Science
, vol.45
, pp. 2218-2222
-
-
Beaudhuin, M.1
Zaidat, K.2
Duffar, T.3
Lemiti, M.4
-
17
-
-
0024714681
-
Unified description of the rate of nucleation-mediated crystal growth
-
W. Obretenov, D. Kashchiev, and V. Bostanov Unified description of the rate of nucleation-mediated crystal growth Journal of Crystal Growth 96 4 1989 843 848
-
(1989)
Journal of Crystal Growth
, vol.96
, Issue.4
, pp. 843-848
-
-
Obretenov, W.1
Kashchiev, D.2
Bostanov, V.3
-
18
-
-
0022752706
-
Monte carlo simulation of polynuclear mechanism of crystal growth
-
DOI 10.1016/0013-4686(86)85003-4
-
W. Obretenov, V. Bostanov, E. Budevski, R. Barradas, and T. VanderNoot Monte Carlo simulation of polynuclear mechanism of crystal growth Electrochimica Acta 31 7 1986 753 758 (Pubitemid 16639863)
-
(1986)
Electrochimica Acta
, vol.31
, Issue.7
, pp. 753-758
-
-
Obretenov, W.1
Bostanov, V.2
Budevski, E.3
Barradas, R.G.4
Vander Noot, T.J.5
-
19
-
-
0000662866
-
Transients in the rate of crystal growth
-
G.H. Gilmer Transients in the rate of crystal growth Journal of Crystal Growth 49 3 1980 465 474
-
(1980)
Journal of Crystal Growth
, vol.49
, Issue.3
, pp. 465-474
-
-
Gilmer, G.H.1
-
20
-
-
0033889470
-
Monte Carlo modeling of silicon crystal growth
-
DOI 10.1016/S0022-0248(99)00836-2
-
K.M. Beatty, and K.A. Jackson Monte Carlo modeling of silicon crystal growth Journal of Crystal Growth 211 14 2000 13 17 (Pubitemid 30583715)
-
(2000)
Journal of Crystal Growth
, vol.211
, Issue.1
, pp. 13-17
-
-
Beatty, K.M.1
Jackson, K.A.2
-
21
-
-
85031609188
-
Response to: Some remarks on the undercooling of the Si(1 1 1) facet and the Monte Carlo modeling of silicon crystal growth
-
by Kirk M. Beatty; Kenneth A. Jackson
-
K.A. Jackson, Response to: Some remarks on the undercooling of the Si(1 1 1) facet and the Monte Carlo modeling of silicon crystal growth, by Kirk M. Beatty; Kenneth A. Jackson, Journal of Crystal Growth 211 (2000) 13;
-
(2000)
Journal of Crystal Growth
, vol.211
, pp. 13
-
-
Jackson, K.A.1
-
23
-
-
84865325617
-
Some remarks on the undercooling of the Si facet and the monte carlo modeling of silicon crystal growth by Kirk M. Beatty
-
Kenneth A. Jackson Journal of Crystal Growth 325(1) (2011) 101-103
-
W. Miller, Some remarks on the undercooling of the Si facet and the monte carlo modeling of silicon crystal growth by Kirk M. Beatty; Kenneth A. Jackson, Journal of Crystal Growth 211 (2000) 13, Journal of Crystal Growth 325(1) (2011) 101103.
-
(2000)
Journal of Crystal Growth
, vol.211
, pp. 13
-
-
Miller, W.1
-
25
-
-
77949578631
-
The effect of substrate material on nucleation behavior of molten silicon for photovoltaics
-
A. Appapillai, and E. Sachs The effect of substrate material on nucleation behavior of molten silicon for photovoltaics Journal of Crystal Growth 312 8 2010 1297 1300
-
(2010)
Journal of Crystal Growth
, vol.312
, Issue.8
, pp. 1297-1300
-
-
Appapillai, A.1
Sachs, E.2
-
26
-
-
33745246555
-
Growth of structure-controlled polycrystalline silicon ingots for solar cells by casting
-
DOI 10.1016/j.actamat.2006.03.014, PII S1359645406002035
-
K. Fujiwara, W. Pan, N. Usami, K. Sawada, M. Tokairin, Y. Nose, A. Nomura, T. Shishido, and K. Nakajima Growth of structure-controlled polycrystalline silicon ingots for solar cells by casting Acta Materialia 54 12 2006 3191 3197 (Pubitemid 43928790)
-
(2006)
Acta Materialia
, vol.54
, Issue.12
, pp. 3191-3197
-
-
Fujiwara, K.1
Pan, W.2
Usami, N.3
Sawada, K.4
Tokairin, M.5
Nose, Y.6
Nomura, A.7
Shishido, T.8
Nakajima, K.9
-
28
-
-
41449109584
-
Carbon concentration and particle precipitation during directional solidification of multicrystalline silicon for solar cells
-
L. Liu, S. Nakano, and K. Kakimoto Carbon concentration and particle precipitation during directional solidification of multicrystalline silicon for solar cells Journal of Crystal Growth 310 7-9 2008 2192 2197
-
(2008)
Journal of Crystal Growth
, vol.310
, Issue.79
, pp. 2192-2197
-
-
Liu, L.1
Nakano, S.2
Kakimoto, K.3
-
29
-
-
0022663831
-
Releasing material for the growth of shaped silicon crystals
-
Y. Maeda, T. Yokoyama, I. Hide, T. Matsuyama, and K. Sawaya Releasing material for the growth of shaped silicon crystals Journal of the Electrochemical Society 133 2 1986 440 443 (Pubitemid 16488282)
-
(1986)
Journal of the Electrochemical Society
, vol.133
, Issue.2
, pp. 440-443
-
-
Maeda, Y.1
Yokoyama, T.2
Hide, I.3
Matsuyama, T.4
Sawaya, K.5
|