Influence of oxidation on the wetting behavior of liquid silicon on Si 3N4-coated substrates

Journal of Crystal Growth

Volumn 312, Issue 16-17, 2010, Pages 2404-2410

  Brynjulfsen, Ingvild ^a   Bakken, Astrid ^a   Tangstad, Merete ^a   Arnberg, Lars ^a  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

Author keywords

A1. Oxidation; A1. Wettability; B1. Si3N4; B1. Silicon

Indexed keywords

A1. OXIDATION; A1. WETTABILITY; COATED SUBSTRATES; DEOXIDATION; HIGH TEMPERATURE; HOLDING TEMPERATURES; HOLDING TIME; LIQUID SILICON; OXIDATION TEMPERATURE; OXYGEN CONCENTRATIONS; OXYGEN CONTENT; OXYGEN LEVELS; PARTIAL PRESSURE OF OXYGEN; SESSILE DROP WETTING; SILICA SUBSTRATE; SILICON NITRIDE COATING; WETTING ANGLE; WETTING BEHAVIOR;

ARGON; ATMOSPHERIC TEMPERATURE; COATINGS; OXIDATION; OXYGEN; REACTION RATES; SILICA; SILICON; SILICON NITRIDE; SUBSTRATES; WETTING;

SILICON OXIDES;

EID: 77955274089     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.05.006     Document Type: Article

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