Nucleation of silicon on Si3N4 coated SiO2

Journal of Crystal Growth

Volumn 331, Issue 1, 2011, Pages 64-67

  Brynjulfsen, I ^a   Arnberg, L ^a  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

Author keywords

A1. Nucleation; A1. Solidification; A2. Undercooling; B1. Silicon

Indexed keywords

A1. NUCLEATION; A1. SOLIDIFICATION; A2. UNDERCOOLING; B1. SILICON; COATING PARAMETERS; COATING THICKNESS; CONTROLLED GROWTH; COOLING RATES; DENDRITIC GROWTH; HIGH UNDERCOOLINGS; LARGE-GRAIN; OXYGEN CONCENTRATIONS; POSITIVE EFFECTS; SESSILE DROP METHOD; SOLAR CELL SILICON; STRUCTURE CONTROL; WETTING ANGLE;

COATINGS; COOLING; DIFFERENTIAL THERMAL ANALYSIS; EXPERIMENTS; NUCLEATION; SILICON COMPOUNDS; SILICON OXIDES; SOLIDIFICATION; THICKNESS MEASUREMENT;

UNDERCOOLING;

EID: 80051889131     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.07.003     Document Type: Article

References (15)

1. K. Fujiwara, W. Pan, K. Sawada, M. Tokairin, N. Usami, Y. Nose, A. Nomura, T. Shishido, and K. Nakajima Directional growth method to obtain high quality polycrystalline silicon from its melt Journal of Crystal Growth 292 2 2006 282 285 (Pubitemid 44036912)
2. K. Fujiwara, W. Pan, N. Usami, K. Sawada, M. Tokairin, Y. Nose, A. Nomura, T. Shishido, and K. Nakajima Growth of structure-controlled polycrystalline silicon ingots for solar cells by casting Acta Materialia 54 12 2006 3191 3197 (Pubitemid 43928790)
3. K. Fujiwara, K. Maeda, N. Usami, G. Sazaki, Y. Nose, A. Nomura, T. Shishido, and K. Nakajima In situ observation of Si faceted dendrite growth from low-degree-of-undercooling melts Acta Materialia 56 11 2008 2663 2668
4. K. Fujiwara, K. Maeda, N. Usami, G. Sazaki, Y. Nose, and K. Nakajima Formation mechanism of parallel twins related to si-facetted dendrite growth Scripta Materialia 57 2 2007 81 84 (Pubitemid 46678890)
5. W. Kurz, D.J. Fisher, Fundamentals of Solidification, Trans Tech Publications, 1998.
6. 4 inclusions in multicrystalline silicon ingots Materials Science in Semiconductor Processing 7 12 2004 39 43
7. M. Beaudhuin, K. Zaidat, T. Duffar, and M. Lemiti Impurities influence on multicrystalline photovoltaic silicon Transactions of the Indian Institute of Metals 62 2009 505 509
8. N. Mangelinck-Noël, and T. Duffar Modelling of the transition from a planar faceted front to equiaxed growth: application to photovoltaic polycrystalline silicon Journal of Crystal Growth 311 1 2008 20 25
9. T. Buonassisi, A.A. Istratov, M.D. Pickett, J.-P. Rakotoniaina, O. Breitenstein, M.A. Marcus, S.M. Heald, and E.R. Weber Transition metals in photovoltaic-grade ingot-cast multicrystalline silicon: Assessing the role of impurities in silicon nitride crucible lining material Journal of Crystal Growth 287 2 2006 402 407 (Pubitemid 43069664)
10. A. Appapillai, and E. Sachs The effect of substrate material on nucleation behavior of molten silicon for photovoltaics Journal of Crystal Growth 312 8 2010 1297 1300
11. I. Brynjulfsen, A. Bakken, M. Tangstad, and L. Arnberg Influence of oxidation on the wetting behavior of liquid silicon on Si3N4-coated substrates Journal of Crystal Growth 312 1617 2010 2404 2410
12. K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki, and K. Nakajima Grain growth behaviors of polycrystalline silicon during melt growth processes Journal of Crystal Growth 266 4 2004 441 448
13. D.A. Porter, K. Easterling, Phase Transformations in Metals and Alloys, Chapman & Hall.
14. J. Koh, A.S. Ferlauto, P.I. Rovira, C.R. Wronski, and R.W. Collins Evolutionary phase diagrams for plasma-enhanced chemical vapor deposition of silicon thin films from hydrogen-diluted silane Applied Physics Letters 75 15 1999 2286 2288 (Pubitemid 129564248)
15. E. Vallat-Sauvain, J. Bailat, J. Meier, X. Niquille, U. Kroll, and A. Shah Influence of the substrates surface morphology and chemical nature on the nucleation and growth of microcrystalline silicon Thin Solid Films 485 12 2005 77 81 (Pubitemid 40902591)