Nucleation properties of undercooled silicon at various substrates

Journal of Applied Physics

Volumn 109, Issue 8, 2011, Pages

  Appapillai, Anjuli T ^a   Sachs, Christoph ^a   Sachs, Emanuel M ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COATING UNIFORMITY; DOUBLE LAYERS; DRY AND WET; DRY OXIDE; FOREIGN SUBSTRATES; GRAIN STRUCTURES; INTERFACIAL INTERACTION; MELTING TEMPERATURES; MOLTEN SILICON; NUCLEATION BEHAVIOR; OUTER LAYER; RECRYSTALLIZATION PROCESS; SAMPLE DEFORMATION; SUBSTRATE MATERIAL; THERMAL OXIDES; VARIOUS SUBSTRATES;

COATINGS; DIFFERENTIAL SCANNING CALORIMETRY; MATERIALS PROPERTIES; MOLTEN MATERIALS; NUCLEATION; SILICON NITRIDE; SILICON WAFERS; SUBSTRATES; UNDERCOOLING;

SILICON OXIDES;

EID: 79955723720     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3574446     Document Type: Article

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