Transport mechanisms and effective Schottky barrier height of ZnO/a-Si:H and ZnO/μc-Si:H heterojunction solar cells

Journal of Applied Physics

Volumn 114, Issue 18, 2013, Pages

  Corpus Mendoza, Asiel N ^a   De Souza, M M ^a   Hamelmann, Frank ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b UNIVERSITY OF APPLIED SCIENCES   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEPLETION REGION; DOPING CONCENTRATION; HETEROJUNCTION SOLAR CELLS; IDEALITY FACTORS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; THIN-FILM SILICON SOLAR CELLS; TRANSPORT MECHANISM;

COMPUTER SIMULATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SILICON; SILICON SOLAR CELLS;

HETEROJUNCTIONS;

EID: 84887864933     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4831661     Document Type: Article

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