Improvement of amorphous silicon solar cell performance by inserting a tungsten oxide layer between zinc oxide and p-type amorphous silicon carbide

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2011, Pages 000612-000615

  Im, Jong San ^a   Jeon, Jin Wan ^a   Park, Sangil ^a   Lee, Yongmin ^a   Lim, Koeng Su ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

A-SIC:H; AMORPHOUS SILICON (A-SI:H); CELL PERFORMANCE; CONTACT PROBLEM; DEPLETION REGION; FILL FACTOR; P-TYPE; RADIO-FREQUENCY-MAGNETRON SPUTTERING; RESISTIVE CONTACTS; SERIES RESISTANCES; SHORT WAVELENGTHS; TUNGSTEN OXIDE; ZINC OXIDE (ZNO); ZNO;

ALUMINUM; AMORPHOUS SILICON; ELECTRIC RESISTANCE; OXIDES; PHOTOVOLTAIC EFFECTS; SILICON; TUNGSTEN COMPOUNDS; ZINC OXIDE;

SILICON CARBIDE;

EID: 84861020758     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2011.6186028     Document Type: Conference Paper

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