The effect of surface states at the SnO2/p-a-Si:H interface

Journal of Non-Crystalline Solids

Volumn 262, Issue 1-3, 2000, Pages 99-105

  Prentice, J S C ^a  

^a UNIVERSITY OF JOHANNESBURG   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRIC POTENTIAL; ENERGY GAP; INTERFACES (MATERIALS); MATHEMATICAL MODELS; TIN COMPOUNDS;

CONDUCTION BAND EDGE; PHOTOVOLTAIC CELL SIMULATION; SURFACE STATES; TIN OXIDES;

PHOTOVOLTAIC CELLS;

EID: 0033908855     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(99)00701-2     Document Type: Article

References (6)

1. J.S.C. Prentice, PhD thesis, Department of Physics, Rand Afrikaans University, 1999.
2. F. Smole, M. Topic, J. Furlan, J. Non-Cryst. Solids 194 (1996) 312.
3. F. Sánchez Sinencio, R. Williams, J. Appl. Phys. 54 (1983) 2757.
4. Z. Crnjak Orel, B. Orel, M. Klanjsek Gunde, Solar Energy Mater. Solar Cells 26 (1992) 105.
5. A. Antonaia, P. Menna, M.L. Addonizio, M. Crocchiolo, Solar Energy Mater. Solar Cells 28 (1992) 167.
6. I. Baiberg, Y. Goldstein, A. Many, Solid State Phenomena 44-46 (1995) 791 and references therein.