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Journal of Applied Physics

Volumn 106, Issue 6, 2009, Pages

BN/ZnO heterojunction diodes with apparently giant ideality factors

(3) Brotzmann M a Vetter, U a Hofsass H a

a UNIVERSITY OF GÖTTINGEN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYER; COMMON FEATURES; CRYSTALLINE SEMICONDUCTORS; DISORDERED MATERIALS; ELECTRICAL BREAKDOWN; FRENKEL-POOLE CONDUCTION; HETEROJUNCTION DIODES; I - V CURVE; IDEALITY FACTORS; IV CHARACTERISTICS; LOW-PARASITIC; QUANTITATIVE MODELS; RECTIFYING BEHAVIORS; SATURATION CURRENT; SCHOTTKY DIODES; TURBOSTRATIC BORON NITRIDE; TURN ON VOLTAGE; WIDE BAND GAP; ZNO;

AMORPHOUS FILMS; AMORPHOUS SEMICONDUCTORS; BORON; BORON NITRIDE; DISTILLATION; HETEROJUNCTIONS; NITRIDES; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; ZINC OXIDE;

SEMICONDUCTOR DIODES;

EID: 70349644980 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3212987 Document Type: Article

Times cited : (67)

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