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Volumn 39, Issue 11, 2008, Pages 1292-1295
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Microcrystalline silicon thin films: A review of physical properties
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Author keywords
Density of state (DOS); Microcrystalline silicon; Optoelectronic properties
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Indexed keywords
ABSORPTION;
ACTIVATION ENERGY;
BORON;
CONCENTRATION (PROCESS);
CRYSTAL ATOMIC STRUCTURE;
FERMI LEVEL;
FERMIONS;
GALLIUM ALLOYS;
GAS ABSORPTION;
HYDROGEN;
MICROCRYSTALLINE SILICON;
PHOTOCURRENTS;
PLASMA APPLICATIONS;
SEMICONDUCTING SILICON COMPOUNDS;
SILANES;
SILICON;
THERMAL LOGGING;
THICK FILMS;
THIN FILMS;
ATOMIC FORCES;
BORON CONCENTRATIONS;
BORON DOPED;
CHARGE HOPPING;
CONSTANT PHOTOCURRENT METHODS;
DENSITY OF STATE (DOS);
DENSITY OF STATES;
DIBORANE;
ELECTRICAL;
ELECTRICAL FIELDS;
ELECTRONIC AND STRUCTURAL PROPERTIES;
FERMI ENERGIES;
FERMI ENERGY LEVELS;
GRAIN SIZES;
HIGH TEMPERATURES;
HYDROGENATED MICROCRYSTALLINE SILICONS;
LOW TEMPERATURES;
MORPHOLOGICAL PROPERTIES;
OPTICAL;
OPTOELECTRONIC PROPERTIES;
PHOTON ENERGIES;
REACTIVE GASES;
REMAINED CONSTANTS;
RF PLASMAS;
SILICON FILMS;
STRAIGHT LINES;
TRANSPORT MECHANISMS;
VARIABLE RANGE HOPPING;
X-RAY DIFFRACTIONS;
NONMETALS;
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EID: 54849437525
PISSN: 00262692
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mejo.2008.01.019 Document Type: Article |
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Times cited : (5)
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References (14)
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