Characterization and simulation of a-Si:H/μc-Si:H tandem solar cells

Solar Energy Materials and Solar Cells

Volumn 95, Issue 12, 2011, Pages 3318-3327

  Ding, Kaining ^a   Kirchartz, Thomas ^a,b   Pieters, Bart E ^a   Ulbrich, Carolin ^a   Ermes, Alexander M ^a   Schicho, Sandra ^a,c   Lambertz, Andreas ^a   Carius, Reinhard ^a   Rau, Uwe ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

^c UNIVERSITÉ DE SHERBROOKE   (Canada)

Author keywords

Carrier collection; Light trapping; Modeling; Quantum efficiency; Silicon

Indexed keywords

A-SI:H; ABSORBER LAYERS; ABSORPTANCE; CARRIER COLLECTION; DEVICE CHARACTERISTICS; DEVICE PROPERTIES; DEVICE SIMULATORS; DOPED LAYERS; EXPERIMENTAL DATA; EXTERNAL QUANTUM EFFICIENCY; GOOD CORRELATIONS; INITIAL EFFICIENCY; INPUT PARAMETER; LIGHT TRAPPING; MAXIMUM EFFICIENCY; P-LAYER; REFLECTIVITY SPECTRA; REPRODUCIBILITIES; SINGLE JUNCTION; SPATIALLY RESOLVED; TANDEM SOLAR CELLS; ZNO; ZNO SUBSTRATE;

EFFICIENCY; MODELS; OPTICAL PROPERTIES; QUANTUM EFFICIENCY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS; SILICON; SOLAR ABSORBERS; SUBSTRATES; ZINC OXIDE;

SEMICONDUCTING SILICON;

EID: 80053605036     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.07.023     Document Type: Article

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