Improved fill factors in amorphous silicon solar cells on zinc oxide by insertion of a germanium layer to block impurity incorporation

Applied Physics Letters

Volumn 85, Issue 3, 2004, Pages 479-481

  Ganguly, G ^a,e   Carlson, D E ^a   Hegedus, S S ^b   Ryan, D ^b   Gordon, R G ^c   Pang, D ^c   Reedy, R C ^d  

^a BP Solar ^*  (United States)

^b UNIVERSITY OF DELAWARE   (United States)

^c HARVARD UNIVERSITY   (United States)

^d NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^e UNITED SOLAR OVONIC LLC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTANCE; OPEN CIRCUIT VOLTAGE; OPTICAL COUPLING; PLASMA DISCHARGES;

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; GERMANIUM; IMPURITIES; INTERFACES (MATERIALS); PHOTOEMISSION; PLASMAS; QUANTUM EFFICIENCY; REFRACTIVE INDEX; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DIODES; SHORT CIRCUIT CURRENTS; ZINC OXIDE;

SILICON SOLAR CELLS;

EID: 4043157640     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1773372     Document Type: Article

References (18)

1. R. O. Gordon, Mater. Res. Soc. Symp. Proc. 426, 419 (1996).
2. J. H. Thomas, Appl. Phys. Lett. 42, 794 (1983).
3. H. Schade, Z. E. Smith, J. H. Thomas, and A. Catalano, Thin Solid Films 117, 149 (1984).
4. S. Kumar and B. Drevillion. J. Appl. Phys. 65, 3023 (1989).
5. S. Major, S. Kumar, M. Bhatnagar, and K. L. Chopra, Appl. Phys. Lett. 49, 394 (1986).
6. H. Sakai and Y. Ichikawa, J. Non-Cryst. Solids 137/138, 1155 (1991).
7. R. R. Arya, R. S. Oswald, Y. M. Li, N. Maley, K. Jansen, L. Yang, L. F. Chen, F. Willing, M. S. Bennett, J. Morris, and D. E. Carlson, Proceedings of the 1st World Conference on Photovoltaic Energy Conversion (IEEE. Piscataway, NJ, 1994), p. 394.
8. E. Bohmer, F. Siebke, B. Rech, C. Beneking, and H. Wagner, Mater. Res. Soc. Symp. Proc. 420, 519 (1996).
9. A. Nuruddin and J. R. Abelson, Thin Solid Films 394, 49 (2001).
10. K. Minegishi, Y. Koiwai, Y. Kikuchi, K. Yano, M. Kasuga, and A. Shimizu, Jpn. J. Appl. Phys., Part 2 36, L1453 (1997).
11. M. Kubon, E. Boehmer, M. Gastel, F. Siebke, W. Beyer, C. Beneking, and H. Wagner. Ref. 7, p. 500.
12. P. I. Rovira, A. S. Ferlauto, R. J. Koval, C. R. Wronski, R. W. Collins, and G. Ganguly, Mater. Res. Soc. Symp. Proc. 609, A19.6 (2000).
13. S. S. Hegedus, G. Ganguly, R. R. Arya, and M. Gibson, Mater. Res. Soc. Symp. Proc. 557, 737 (1999); S. S. Hegedus, R. Kaplan, G. Ganguly, and G. S. Wood, Proceedings of the 28th IEEE Photovoltaic Solar Energy Conference (IEEE, Pisactaway, NJ, 2000), p. 728.
14. S. S. Hegedus, G. Ganguly, R. R. Arya, and M. Gibson, Mater. Res. Soc. Symp. Proc. 557, 737 (1999); S. S. Hegedus, R. Kaplan, G. Ganguly, and G. S. Wood, Proceedings of the 28th IEEE Photovoltaic Solar Energy Conference (IEEE, Pisactaway, NJ, 2000), p. 728.
15. S. R. Summerfelt, U.S. Patent No. 5,326,721 (1994).
16. S. C. Jain and P. Balk, Thin Solid Films 223, 248 (1993).
17. J. Hu and R. G. Gordon, Mater. Res. Soc. Symp. Proc. 202, 457 (1991).
18. J. Hu and R. G. Gordon. Sol. Cells 30, 437 (1991).