The role of high work-function metallic nanodots on the performance of a-Si:H solar cells: Offering ohmic contact to light trapping

ACS Nano

Volumn 4, Issue 12, 2010, Pages 7331-7336

  Kim, Jeehwan ^a   Abou Kandil, Ahmed ^b   Fogel, Keith ^a   Hovel, Harold ^a   Sadana, Devendra K ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Egypt IBM Nanotechnology Research Center (EGNC)   (Egypt)

Author keywords

amorphous silicon solar cells; light trapping; metal nanodots; plasmonic; schottky barrier; transparent conducting oxide; work function

Indexed keywords

A-SI:H; A-SIC:H; CELL SURFACES; CONTINUOUS LAYERS; EFFICIENCY ENHANCEMENT; FILL FACTOR; HIGH-WORK-FUNCTION METAL; HYDROGENATED AMORPHOUS SILICON (A-SI:H); LIGHT TRAPPING; METAL LAYER; METALLIC INTERFACES; NANODOTS; OHMIC BEHAVIOR; P-TYPE; PLASMONIC; SCHOTTKY BARRIERS; TRANSPARENT CONDUCTING OXIDE; TWO-MATERIALS; ULTRA-THIN;

AMORPHOUS CARBON; CELL MEMBRANES; METALS; OHMIC CONTACTS; OPEN CIRCUIT VOLTAGE; PLASMONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; SILICON SOLAR CELLS; SOLAR CELLS; WORK FUNCTION;

AMORPHOUS SILICON;

EID: 78650741447     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn1023544     Document Type: Article

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