The open-circuit voltage in microcrystalline silicon solar cells of different degrees of crystallinity

Thin Solid Films

Volumn 516, Issue 20, 2008, Pages 6974-6978

  Nath, Madhumita ^a   Roca i Cabarrocas, P ^b   Johnson, E V ^b   Abramov, A ^b   Chatterjee, P ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

Computer modeling; Crystalline volume fraction; Microcrystalline silicon; Open circuit voltage

Indexed keywords

COMPUTER CIRCUITS; DEFECT DENSITY; ENERGY GAP; FERMI LEVEL; OPEN CIRCUIT VOLTAGE; OPTICAL DATA PROCESSING; SILICON SOLAR CELLS; SOLAR CELLS; THIN FILM CIRCUITS; THIN FILM SOLAR CELLS; TIMING CIRCUITS;

COMPUTER MODELING; CRYSTALLINE FRACTIONS; CRYSTALLINE VOLUME FRACTION; DEGREES OF CRYSTALLINITY; EFFICIENCY CHARACTERISTIC; EXPERIMENTAL CHARACTERIZATION; MICROCRYSTALLINE SILICON THIN FILMS; VALENCE BAND EDGES;

MICROCRYSTALLINE SILICON;

EID: 45849116953     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.12.052     Document Type: Article

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