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Journal of Applied Physics

Volumn 110, Issue 2, 2011, Pages

Carrier transport mechanism in the SnO2:F/p-type a-Si:H heterojunction

(6) Cannella, G a,b Principato, F a Foti, M c Di Marco, S c Grasso, A c Lombardo, S b

a UNIVERSITY OF PALERMO (Italy)

b CNR IMM (Italy)

c STMICROELECTRONICS (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

A-DENSITY; A-SI:H; BAND DIAGRAMS; BAND EDGE; BUILT-IN POTENTIAL; C-V CURVE; CAPACITANCE VOLTAGE MEASUREMENTS; CURRENT TRANSPORT MECHANISM; CURRENT VOLTAGE; I - V CURVE; INTERFACE DEFECTS; P-TYPE; POWER LAW; REVERSE CURRENTS; SERIES CONNECTIONS; SIMULATION SOFTWARE; TRANSPORT MECHANISM; TRAP ENERGY;

CAPACITANCE; COMPUTER SIMULATION; COMPUTER SOFTWARE; HETEROJUNCTIONS;

SILICON;

EID: 79961105410 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3606408 Document Type: Article

Times cited : (18)

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