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Volumn 46, Issue 47, 2013, Pages

Ozone-assisted atomic layer deposited ZnO thin films for multifunctional device applications

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; ELECTROCHEMICAL MIGRATION; GROWTH-TEMPERATURE DEPENDENCE; LOW GROWTH RATE; METAL OXIDE SEMICONDUCTOR; MULTIFUNCTIONAL DEVICES; RESISTIVE SWITCHING; SPATIAL UNIFORMITY;

EID: 84887838705     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/46/47/475101     Document Type: Article
Times cited : (10)

References (25)
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    • Puurunen, R.L.1
  • 6
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    • Niinisto, L.1    Ritala, M.2    Leskela, M.3
  • 12
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    • Klepper, K.B.1    Nilsen, O.2    Fjellvag, H.3
  • 13
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    • 10.1081/CR-100100263 1520-5703
    • Oyama S T 2000 Catal. Rev. 42 279
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  • 22
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    • DOI 10.1063/1.1845598, 012107
    • Fujii T, Kawasaki M, Sawa A, Akoh H, Kawazoe Y and Tokura Y 2005 Appl. Phys. Lett. 86 012107 (Pubitemid 40211571)
    • (2005) Applied Physics Letters , vol.86 , Issue.1 , pp. 0121071-0121073
    • Fujii, T.1    Kawasaki, M.2    Sawa, A.3    Akoh, H.4    Kawazoe, Y.5    Tokura, Y.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.