Electrical conductivity and photoresistance of atomic layer deposited Al-doped ZnO films

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 31, Issue 1, 2013, Pages

  Mundle, Rajeh M ^a   Terry, Hampton S ^a   Santiago, Kevin ^a   Shaw, Dante ^a   Bahoura, Messaoud ^a   Pradhan, Aswini K ^a   Dasari, Kiran ^b   Palai, Ratnakar ^b  

^a NORFOLK STATE UNIVERSITY   (United States)

^b UNIVERSITY OF PUERTO RICO   (Puerto Rico)

Author keywords

[No Author keywords available]

Indexed keywords

AL COMPOSITION; AL CONTENT; AL-DOPED ZNO; ATOMIC LAYER DEPOSITED; CARRIER TRAPS; ELECTRICAL CONDUCTIVITY; ELECTRON DONORS; FILM RESISTIVITY; INTERSTITIAL SITES; OPTICAL MEASUREMENT; PHOTORESISTANCE; PULSE CYCLE; TEMPERATURE DEPENDENCE; VARIOUS SUBSTRATES; VISIBLE REGION; ZNO MATRIX;

ATOMIC FORCE MICROSCOPY; ATOMIC LAYER DEPOSITION; DEPOSITS; ELECTRIC CONDUCTIVITY; METALLIC FILMS; OPTICAL DATA PROCESSING; PHOTOELECTRONS; SAPPHIRE; SUBSTRATES; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

ALUMINUM;

EID: 84871889593     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.4772665     Document Type: Article

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