Charge transfer and partial pinning at the contacts as the origin of a double dip in the transfer characteristics of graphene-based field-effect transistors

Nanotechnology

Volumn 22, Issue 27, 2011, Pages

  Bartolomeo, Antonio Di ^a,b   Giubileo, Filippo ^a,b   Santandrea, Salvatore ^a,b   Romeo, Francesco ^a,b   Citro, Roberta ^a,b   Schroeder, Thomas ^c   Lupina, Grzegorz ^c  

^a UNIVERSITY OF SALERNO   (Italy)

^b CNR SPIN SALERNO   (Italy)

^c IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-GATE; CHARGE NEUTRALITY; CHARGE STORAGE; FERMI ENERGY; GATE VOLTAGES; MEMORY DEVICE; METAL ELECTRODES; NEUTRALITY POINT; PARTIAL CHARGES; TRANSFER CHARACTERISTICS;

CHARGE TRANSFER; GRAPHENE; ION EXCHANGE; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 79957861622     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/27/275702     Document Type: Article

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