SCOPUS 정보 검색 플랫폼

Nitride Semiconductor Devices: Principles and Simulation

Volumn , Issue , 2007, Pages 467-491

GaN Nanowire Lasers

(2) Maslov, Alexey V a Ning, Cun zheng a,b

a NASA AMES RESEARCH CENTER (United States)

b Arizona State University (United States)

Author keywords

Anisotropy of material gain; GaN nanowire lasers; Guided modes; Modal gain; Nanowire characterization; Nanowire growth; Nanowire laser principles; Nitride semiconductor devices; Threshold

Indexed keywords

EID: 84887444002 PISSN: None EISSN: None Source Type: Book
DOI: 10.1002/9783527610723.ch21 Document Type: Chapter

Times cited : (8)

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