Modal gain in a semiconductor nanowire laser with anisotropic bandstructure

IEEE Journal of Quantum Electronics

Volumn 40, Issue 10, 2004, Pages 1389-1397

  Maslov, A V ^a,b   Ning, C Z ^a  

^a NASA AMES RESEARCH CENTER   (United States)

^b ELORET CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; BAND STRUCTURE; GALLIUM NITRIDE; LASER MODES; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; SEMICONDUCTOR DEVICE MODELS;

CONFINEMENT FACTORS; NANOWIRE LASERS; SEMICONDUCTOR NANOWIRES;

SEMICONDUCTOR LASERS;

EID: 5144221594     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2004.834767     Document Type: Article

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