Comparison of modal gain and material gain for strong guiding slab waveguides

IEE Proceedings: Optoelectronics

Volumn 148, Issue 3, 2001, Pages 131-133

  Huang, Y Z ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; GAIN MEASUREMENT; LIGHT PROPAGATION; MODAL ANALYSIS; PHOTODETECTORS; QUANTUM WELL LASERS; SEMICONDUCTOR DEVICE MODELS;

MODAL GAIN; SLAB WAVEGUIDES;

WAVEGUIDES;

EID: 0035358757     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20010519     Document Type: Article

References (6)

1. Analysis of the optical confinement factor in semiconductor lasers
2. Difference between TE and TM modal gain in amplifying waveguides: Analysis and assessment of two perturbation approaches
3. Influence of lateral propagating modes on laser output characteristics in selectively oxidized vertical cavity surface-emitting lasers with double oxide layers
4. 2
5. Development of a library of low-loss silicon-on insulator optoelectronic devices
6. 0.4 rib waveguide avalanche photodetectors for 1.3 μm operation