Nanostructure of GaN and SiC nanowires based on carbon nanotubes

Journal of Materials Research

Volumn 14, Issue 4, 1999, Pages 1175-1177

  Zhu, Jing ^a   Fan, Shoushan ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ANALYSIS; CRYSTAL DEFECTS; ELECTRON DIFFRACTION; ELECTRON MICROSCOPY; HIGH RESOLUTION ELECTRON MICROSCOPY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE; WIRE;

CARBON NANOTUBES; LAYER SEQUENCE FAULTS; NANOWIRES;

NANOTECHNOLOGY;

EID: 0032629607     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1999.0156     Document Type: Article

References (3)

1. H. Dai, E. W. Wang, Y. Z. Lu, S. Fan, and C. Lieber, Nature (London) 375 769 (1995).
2. W. Han, S. Fan, Q. Li, and Y. Hu, Science 277, 1287-1289 (1997).
3. Q. Li, S. Fan, W. Han, C. Sun, and W. Liang, Jpn. J. Appl. Phys. 36, Pt. 2, 4B, L501 (1997).