Band offsets at the epitaxial anatase TiO2/n-SrTiO3(0 0 1) interface

Surface Science

Volumn 603, Issue 5, 2009, Pages 771-780

  Chambers, S A ^a,b   Ohsawa, T ^a   Wang, C M ^b   Lyubinetsky, I ^b   Jaffe, J E ^a  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^b PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

Heterojunctions; Molecular beam epitaxy; Semiconducting films; Semiconductor semiconductor interfaces; Single crystal epitaxy

Indexed keywords

CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; FILM PREPARATION; FUNCTIONAL MATERIALS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MOLECULAR SPECTROSCOPY; PHOTOCATALYSIS; SEMICONDUCTING FILMS; SEMICONDUCTOR QUANTUM WIRES; SINGLE CRYSTALS; STRONTIUM ALLOYS; SUBSTRATES; SURFACES; TITANIUM DIOXIDE; TITANIUM OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

ANATASE TIO; BAND GAPS; BAND OFFSETS; CONDUCTION BAND OFFSETS; DENSITY FUNCTIONAL; HIGH-ENERGY RESOLUTIONS; INTERFACE STRUCTURES; OXIDE MATERIALS; PHOTOCATALYTIC PROCESS; SEMICONDUCTOR-SEMICONDUCTOR INTERFACES; SINGLE CRYSTAL EPITAXY; SUBSTRATE SURFACE PREPARATIONS; VALENCE BAND OFFSETS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

DENSITY FUNCTIONAL THEORY;

EID: 60849100505     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2009.01.023     Document Type: Article

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