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Volumn 103, Issue 15, 2013, Pages

Mechanism of stress relaxation in (0001) InGaN/GaN via formation of V-shaped dislocation half-loops

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL THICKNESS; HALF-LOOPS; INGAN/GAN; LITERATURE DATA; SINGLE LAYER;

EID: 84886924348     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4824835     Document Type: Article
Times cited : (47)

References (32)
  • 7
    • 0023406878 scopus 로고
    • 10.1115/1.3173068
    • L. B. Freund, J. Appl. Mech. 54, 553 (1987). 10.1115/1.3173068
    • (1987) J. Appl. Mech. , vol.54 , pp. 553
    • Freund, L.B.1
  • 31
    • 0014814335 scopus 로고
    • 10.1080/14786437008228153
    • P. P. Groves and D. J. Bacon, Philos. Mag. 22, 83 (1970). 10.1080/14786437008228153
    • (1970) Philos. Mag. , vol.22 , pp. 83
    • Groves, P.P.1    Bacon, D.J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.