Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties

Physica B: Condensed Matter

Volumn 405, Issue 22, 2010, Pages 4668-4672

  Wang, H ^a   Jiang, D S ^a   Jahn, U ^b   Zhu, J J ^a   Zhao, D G ^a   Liu, Z S ^a   Zhang, S M ^a   Qiu, Y X ^c   Yang, H ^c  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

Author keywords

Cathodoluminescence; Dislocation; High resolution X ray diffraction; InGaN; Metalorganic chemical vapor deposition

Indexed keywords

COMPOSITION GRADIENT; COMPRESSIVE STRAIN; DISLOCATION; HIGH DEFECT DENSITIES; HIGH RESOLUTION X RAY DIFFRACTION; INGAN; METALORGANIC CHEMICAL VAPOR DEPOSITION; MISFIT DISLOCATIONS; PLASTIC RELAXATION; RED SHIFT; STRAIN RELAXATION MECHANISM; STRUCTURAL AND OPTICAL PROPERTIES; THICK EPITAXIAL; TRANSITION LAYERS;

CATHODOLUMINESCENCE; DEFECT DENSITY; DIFFRACTION; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; STRAIN CONTROL; STRAIN RELAXATION; X RAY DIFFRACTION;

OPTICAL PROPERTIES;

EID: 77957887313     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2010.08.058     Document Type: Article

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