SCOPUS 정보 검색 플랫폼

RSC Advances

Volumn 3, Issue 43, 2013, Pages 20157-20162

High rate deposition of nanocrystalline silicon by thermal plasma enhanced CVD

(4) Cao, Tengfei a Zhang, Haibao a Yan, Binhang a Cheng, Yi a

a TSINGHUA UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE FRACTIONS; CRYSTALLINE SILICONS; DEPOSITION PRECURSORS; HIGH-RATE DEPOSITION; HYDROGENATED NANOCRYSTALLINE SILICON (NC-SI:H); PHOTOLUMINESCENCE PERFORMANCE; PHOTOVOLTAIC INDUSTRY; TYPICAL OPERATING CONDITIONS;

ATMOSPHERIC PRESSURE; NANOCRYSTALLINE SILICON; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SUBSTRATES;

DEPOSITION;

EID: 84886875229 PISSN: None EISSN: 20462069 Source Type: Journal
DOI: 10.1039/c3ra43481h Document Type: Article

Times cited : (15)

References (27)

1
- 84860359260
- Y. Y. Cheng B. Fuckel R. W. MacQueen T. Khoury R. G. C. R. Clady T. F. Schulze N. J. Ekins-Daukes M. J. Crossley B. Stannowski K. Lips T. W. Schmidt Energy Environ. Sci. 2012 5 6953 6959
- (2012) Energy Environ. Sci. , vol.5 , pp. 6953-6959
- Cheng, Y.Y.¹ Fuckel, B.² Macqueen, R.W.³ Khoury, T.⁴ Clady, R.G.C.R.⁵ Schulze, T.F.⁶ Ekins-Daukes, N.J.⁷ Crossley, M.J.⁸ Stannowski, B.⁹ Lips, K.¹⁰ Schmidt, T.W.¹¹

2
- 80053466870
- S. Xu S. Y. Huang I. Levchenko H. P. Zhou D. Y. Wei S. Q. Xiao L. X. Xu W. S. Yan K. Ostrikov Adv. Energy Mater. 2011 1 373 376
- (2011) Adv. Energy Mater. , vol.1 , pp. 373-376
- Xu, S.¹ Huang, S.Y.² Levchenko, I.³ Zhou, H.P.⁴ Wei, D.Y.⁵ Xiao, S.Q.⁶ Xu, L.X.⁷ Yan, W.S.⁸ Ostrikov, K.⁹

3
- 80052229123
- C. W. Teplin M. P. Paranthaman T. R. Fanning K. Alberi L. Heatherly S. H. Wee K. Kim F. A. List J. Pineau J. Bornstein K. Bowers D. F. Lee C. Cantoni S. Hane P. Schroeter D. L. Young E. Iwaniczko K. M. Jones H. M. Branz Energy Environ. Sci. 2011 4 3346 3350
- (2011) Energy Environ. Sci. , vol.4 , pp. 3346-3350
- Teplin, C.W.¹ Paranthaman, M.P.² Fanning, T.R.³ Alberi, K.⁴ Heatherly, L.⁵ Wee, S.H.⁶ Kim, K.⁷ List, F.A.⁸ Pineau, J.⁹ Bornstein, J.¹⁰ Bowers, K.¹¹ Lee, D.F.¹² Cantoni, C.¹³ Hane, S.¹⁴ Schroeter, P.¹⁵ Young, D.L.¹⁶ Iwaniczko, E.¹⁷ Jones, K.M.¹⁸ Branz, H.M.¹⁹

4
- 0001619060
- S. Veprek V. Marecek Solid-State Electron. 1968 11 683
- (1968) Solid-State Electron. , vol.11 , pp. 683
- Veprek, S.¹ Marecek, V.²

5
- 84886940518
- Y. L. He C. Z. Yin G. X. Cheng L. C. Wang X. N. Liu G. Y. Hu Appl. Phys. Lett. 1994 65 860 862
- (1994) Appl. Phys. Lett. , vol.65 , pp. 860-862
- He, Y.L.¹ Yin, C.Z.² Cheng, G.X.³ Wang, L.C.⁴ Liu, X.N.⁵ Hu, G.Y.⁶

6
- 12844282265
- J. Meier R. Fluckiger H. Keppner A. Shah Appl. Phys. Lett. 1994 65 860 862
- (1994) Appl. Phys. Lett. , vol.65 , pp. 860-862
- Meier, J.¹ Fluckiger, R.² Keppner, H.³ Shah, A.⁴

7
- 20844453706
- C. H. Lee A. Sazonov A. Nathan Appl. Phys. Lett. 2005 86 22210622
- (2005) Appl. Phys. Lett. , vol.86 , pp. 22210622
- Lee, C.H.¹ Sazonov, A.² Nathan, A.³

8
- 33845936791
- C. H. Lee A. Sazonov A. Nathan J. Robertson Appl. Phys. Lett. 2006 89 25210125
- (2006) Appl. Phys. Lett. , vol.89 , pp. 25210125
- Lee, C.H.¹ Sazonov, A.² Nathan, A.³ Robertson, J.⁴

9
- 0000881332
- T. Ifuku M. Otobe A. Itoh S. Oda Jpn. J. Appl. Phys., Part 1 1997 36 4031 4034
- (1997) Jpn. J. Appl. Phys., Part 1 , vol.36 , pp. 4031-4034
- Ifuku, T.¹ Otobe, M.² Itoh, A.³ Oda, S.⁴

10
- 0036292704
- P. R. I. Cabarrocas A. F. I. Morral S. Lebib Y. Poissant Pure Appl. Chem. 2002 74 359 367
- (2002) Pure Appl. Chem. , vol.74 , pp. 359-367
- Cabarrocas, P.R.I.¹ Morral, A.F.I.² Lebib, S.³ Poissant, Y.⁴

11
- 47049106534
- A. Parashar S. Kumar P. N. Dixit J. Gope C. M. S. Rauthan S. A. Hashmi Sol. Energy Mater. Sol. Cells 2008 92 1199 1204
- (2008) Sol. Energy Mater. Sol. Cells , vol.92 , pp. 1199-1204
- Parashar, A.¹ Kumar, S.² Dixit, P.N.³ Gope, J.⁴ Rauthan, C.M.S.⁵ Hashmi, S.A.⁶

12
- 70449487129
- Q. J. Cheng S. Y. Xu K. Ostrikov J. Mater. Chem. 2009 19 5134 5140
- (2009) J. Mater. Chem. , vol.19 , pp. 5134-5140
- Cheng, Q.J.¹ Xu, S.Y.² Ostrikov, K.³

13
- 0004244010
- in, W. H. Freeman and Company, New York, 5th edn, p. 358
- P. W. Atkins, T. L. Overton, J. P. Rourke, M. T. Weller and F. A. Armstrong, in Inorganic Chemistry, W. H. Freeman and Company, New York, 5th edn, 2010, p. 358
- (2010) Inorganic Chemistry
- Atkins, P.W.¹ Overton, T.L.² Rourke, J.P.³ Weller, M.T.⁴ Armstrong, F.A.⁵

14
- 0042843477
- D. L. Hildenbrand K. H. Lau A. Sanjurjo J. Phys. Chem. A 2003 107 5448 5451
- (2003) J. Phys. Chem. A , vol.107 , pp. 5448-5451
- Hildenbrand, D.L.¹ Lau, K.H.² Sanjurjo, A.³

15
- 33751499562
- J. A. Seetula Y. Feng D. Gutman P. W. Seakins M. J. Pilling J. Phys. Chem. 1991 95 1658 1664
- (1991) J. Phys. Chem. , vol.95 , pp. 1658-1664
- Seetula, J.A.¹ Feng, Y.² Gutman, D.³ Seakins, P.W.⁴ Pilling, M.J.⁵

16
- 0344493833
- M. Kondo S. Suzuki Y. Nasuno M. Tanda A. Matsuda Plasma Sources Sci. Technol. 2003 12 S111
- (2003) Plasma Sources Sci. Technol. , vol.12 , pp. 111
- Kondo, M.¹ Suzuki, S.² Nasuno, Y.³ Tanda, M.⁴ Matsuda, A.⁵

17
- 26244451229
- K. Ostrikov Rev. Mod. Phys. 2005 77 489
- (2005) Rev. Mod. Phys. , vol.77 , pp. 489
- Ostrikov, K.¹

18
- 84862221545
- L. Zhang J. H. Gao J. Q. Xiao L. S. Wen J. Gong C. Sun Phys. Status Solidi A 2012 209 1080 1084
- (2012) Phys. Status Solidi A , vol.209 , pp. 1080-1084
- Zhang, L.¹ Gao, J.H.² Xiao, J.Q.³ Wen, L.S.⁴ Gong, J.⁵ Sun, C.⁶

19
- 84864506154
- J. Seo B. Hong Nucl. Eng. Technol. 2012 44 9 20
- (2012) Nucl. Eng. Technol. , vol.44 , pp. 9-20
- Seo, J.¹ Hong, B.²

20
- 84880162272
- K. Ostrikov E. C. Neyts M. Meyyappan Adv. Phys. 2013 62 113 224
- (2013) Adv. Phys. , vol.62 , pp. 113-224
- Ostrikov, K.¹ Neyts, E.C.² Meyyappan, M.³

21
- 24044455396
- X. Y. Lin K. X. Lin C. J. Huang Y. P. Yu Y. L. Luo C. Y. Yu H. A. Rui J. Appl. Phys. 2005 98 0349073
- (2005) J. Appl. Phys. , vol.98 , pp. 0349073
- Lin, X.Y.¹ Lin, K.X.² Huang, C.J.³ Yu, Y.P.⁴ Luo, Y.L.⁵ Yu, C.Y.⁶ Rui, H.A.⁷

22
- 0030568377
- E. Edelberg S. Bergh R. Naone M. Hall E. S. Aydil Appl. Phys. Lett. 1996 68 1415 1417
- (1996) Appl. Phys. Lett. , vol.68 , pp. 1415-1417
- Edelberg, E.¹ Bergh, S.² Naone, R.³ Hall, M.⁴ Aydil, E.S.⁵

23
- 78449265208
- Y. Yang L. Xu F. Yang W. Q. Liu J. Xu Z. Y. Ma K. J. Chen J. Non-Cryst. Solids 2010 356 50 51
- (2010) J. Non-Cryst. Solids , vol.356 , pp. 50-51
- Yang, Y.¹ Xu, L.² Yang, F.³ Liu, W.Q.⁴ Xu, J.⁵ Ma, Z.Y.⁶ Chen, K.J.⁷

24
- 0031647178
- A. G. Nassiopoulou V. Ioannou-Sougleridis P. Photopoulos A. Travlos V. Tsakiri D. Papadimitriou Phys. Status Solidi A 1998 165 79 85
- (1998) Phys. Status Solidi A , vol.165 , pp. 79-85
- Nassiopoulou, A.G.¹ Ioannou-Sougleridis, V.² Photopoulos, P.³ Travlos, A.⁴ Tsakiri, V.⁵ Papadimitriou, D.⁶

25
- 42649092104
- K. Kandoussi C. Simon N. Coulon K. Belarbi T. Mohammed-Brahim J. Non-Cryst. Solids 2008 354 2513 2518
- (2008) J. Non-Cryst. Solids , vol.354 , pp. 2513-2518
- Kandoussi, K.¹ Simon, C.² Coulon, N.³ Belarbi, K.⁴ Mohammed-Brahim, T.⁵

26
- 36549104969
- E. Bustarret M. A. Hachicha M. Brunel Appl. Phys. Lett. 1988 52 1675 1677
- (1988) Appl. Phys. Lett. , vol.52 , pp. 1675-1677
- Bustarret, E.¹ Hachicha, M.A.² Brunel, M.³

27
- 0018470344
- H. Fritzsche M. Tanielian C. C. Tsai P. J. Gaczi J. Appl. Phys. 1979 50 3366 3369
- (1979) J. Appl. Phys. , vol.50 , pp. 3366-3369
- Fritzsche, H.¹ Tanielian, M.² Tsai, C.C.³ Gaczi, P.J.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.